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AlN Heat Spreaders
  With its thermal conductivity, high electrical resistivity and good thermal expansion coefficient AlN demonstrates high performance as a heat dissipating substrate or as a heat spreader for low power laser diodes, LED's and Si RF microwave devices. With a slight modification most of the CVD diamond processes can be used for AlN heat spreaders.


  • Similar CTE (4.0ppm/K) to enable low stress mounting of large InP and GaAs chips.

  • High insulation resistance 1 х 1013 ohm-cm.

  • Large areas available.

  • Low dielectric constant 8.8 @1MHz.

  • Excellent surface roughness and edge quality.

Supply of high quality AlN heat spreaders

  • Tc>170W/mk and Tc>200W/mk, standard thickness for 170W/mk mterial: 0.20mm, 0.40mm, 0.50mm, 0.60mm, 0.635mm, 0.80mm, 1.00mm. Other thickness upon request.

  • Ti/Pt/Au sputter deposited metal patterns.

  • Solder pads with AuSn (80/20%, 70/30%), Tm=279oC

  • High edge quality, chip-outs: < 30um standard, < 15um on demand, no metal edge burrs.

  • Supply of assembled (AlN-AlN / AlN-KOVAR) parts using high quality solder joints (AuGe or AuSn) or thermal compression bonding.

  • Possibility to mount additional components (thermistors, ESD devices, etc.)

In this section

Thermal Material Properties