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Scribe dicing is a controlled cleaving process that cleanly singularizes the dice in a semiconductor wafer without removing material. A diamond tool creates a scriber line in thee separation grids between the dice. This line is the origin of controlled fracture during the breaking process. The scribe line is 3-4µm wide, but under the scribe line is a fracture that penetrates the wafer to a depth of 25µm or greater. A slight bending, normally 1-2 degree, will cause the scribe to break cleanly through the wafer along natural crystal planes.


 Scribe dicing is clean, safe, reliable and economical.
■  With a narrow scribe line and controlled fracture, die street widths can be narrowed to 30
µm(150mm wafers) and 20µm (50mm wafers).
■  There is no loss from contamination and degradation in die performance.

Ideal materials for diamond scribe dicing


Applicable wafer diamonds

GaAs & InP

Wafer thickness of 0.05-0.7mm with die dimensions from 0.2 to over 15mm and diameters up to 200mm > 99% yield.

Si & Ge

Wafer thickness of 0.05-0.3mm, die dimensions and yield as above.


Wafer thickness of 0.05-0.5mm, die dimensions from 0.25 to over 15mm and 200mm substrates. The Awindiamond tool gives high throughput and 99% yield.

Sapphire (R-plane)

Used for silicon-on sapphire high-frequency circuits. Scribes and breaks easily without debris damage to the circuitry. Street width can be reduces from 250 to 35µm with a resultant 82% increase in die per wafer.


In this section

3P Diamond Scriber

4P Diamond Scriber