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首頁 > 材料 >
CVD 鑽石 >
散熱片 > CVD鑽石電阻器 > Introduction |
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CVD Diamond Hight Power
Resistor |
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CVD Diamond for
Hight Power
Resistor
applications
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These
resistors provide extremely high
power rating possibilities on
smallest area and can be used in
applications up to 30 GHz.
The devices are suitable for
applications requiring high CW and
peak powers, a broad
frequency response and small
dimensions.
All thin film product with pure Au
contacts, suitable for soldering and
wire bonding. |
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Typical product
specifications
material : CVD
Diamond
Substrate thermal
conductivity : TC >
1000 W/mK
Substrate relative
dielectric constant
:εr ~ 5.5
Resistor material :
TaN
Resistance : 50Ω
,±5% or trimmed to
specification, other
values on request
Contact material :
Ti / Pt/ Au
(100/200/2000 nm)
Backside coating :
Ti / Pt/ Au
(100/200/1000 nm)
Standard
Designs |
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Type
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DRCVD20
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RCVD50
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RCVD80
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RCVD125 |
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#150-112-
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1020
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1019
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1018
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1017 |
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Lenght1 (mm)
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1.14
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1.40
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1.65
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2.67 |
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Width1 (mm) |
0.63
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1.40
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0.89
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2.67 |
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Thickness1 (mm) |
0.38
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0.38
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0.38
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0.38 |
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Power CW (W) |
20
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50
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80
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125 |
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Capacitance2 (pF)
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0.1
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0.20
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0.3
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0.8 |
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Thermal resistance 2(K/W)
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0.53
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0.19
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0.26
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0.05 |
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1
dimensional accuracy
士0.127 mm
2
calculated DC
capacitance and CW
thermal resistance
Metallization
setback from edge :
minimally 0.06mm,
Metallization
thickness : 士25% for
each layer
Au-contact width
0.23mm (0.38mm for
RCVD125)
Au metallization
suitable for wire
bonding and most
solder processes
Specifications
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1 Electrical |
Resistance |
50 , 5% or
trimmed to
specification |
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Capacitance |
0.13-0.83 pF
(see table) |
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Input power
CW |
20-125 Watt
(see table) |
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Peak power |
not tested |
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2 Thermal |
Thermal
Resistance |
0.05-0.53
K/W (see
table) |
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Operating
temperature |
lower bound
not tested,
tested up to
125 C |
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Maximum |
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Storage
temperature |
not tested |
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Temperature
Coefficient
of
Resistance |
200 ppm/K |
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Temperature
Coefficient |
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3 Marking
optional |
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4 Quality |
Visual and
mechanical
inspection
per 824W154 |
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5 Packaging |
Waffle pack |
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