| |
|
 |
 |
 |
|
|
 |
AlN
Heat Spreaders |
|
|
|
|
|
|
 |
|
With its thermal
conductivity, high
electrical resistivity and
good thermal expansion
coefficient AlN demonstrates
high performance as a heat
dissipating substrate or as
a heat spreader for low
power laser diodes, LED's
and Si RF microwave devices.
With a slight modification
most of the CVD diamond
processes can be used for
AlN heat spreaders. |
|
Advantages
-
Similar CTE
(4.0ppm/K) to
enable low
stress mounting
of large InP and
GaAs chips.
-
High insulation
resistance 1
х 1013
ohm-cm.
-
Large areas
available.
-
Low dielectric
constant 8.8
@1MHz.
-
Excellent
surface
roughness and
edge quality.
Supply of high
quality AlN heat
spreaders
-
Tc>170W/mk and
Tc>200W/mk,
standard
thickness for
170W/mk mterial:
0.20mm, 0.40mm,
0.50mm, 0.60mm,
0.635mm, 0.80mm,
1.00mm. Other
thickness upon
request.
-
Ti/Pt/Au sputter
deposited metal
patterns.
-
Solder pads with
AuSn (80/20%,
70/30%), Tm=279oC
-
High edge
quality,
chip-outs: <
30um standard, <
15um on demand,
no metal edge
burrs.
-
Supply of
assembled (AlN-AlN
/ AlN-KOVAR)
parts using high
quality solder
joints (AuGe or
AuSn) or thermal
compression
bonding.
-
Possibility to
mount additional
components (thermistors,
ESD devices,
etc.)
|
|
In this section
Thermal Material
Properties
|
|
|
|
|
|
